Discrete Semiconductors > Transistors > BJTs

D45H11G - onsemi

Trans GP BJT PNP 80V 10A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Technical Details

Case/Package	TO-220-3
China RoHS	Non-Compliant
Collector Base Voltage (VCBO)	80V
Collector Emitter Saturation Voltage	1V
Collector Emitter Voltage (VCEO)	80V
Contact Plating	Tin
Current Rating	-10A
Element Configuration	Single
Emitter Base Voltage (VEBO)	5V
Frequency	40MHz
Gain Bandwidth Product	40MHz
Height	9.28mm
hFE Min	40
Lead Free	Lead Free
Length	10.28mm
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Collector Current	10A
Max Frequency	40MHz
Max Operating Temperature	150°C
Max Power Dissipation	50W
Min Operating Temperature	-55°C
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Polarity	PNP
Power Dissipation	2W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Schedule B	8541290080
Transition Frequency	40MHz
Voltage Rating (DC)	-80V
Weight	4.535924g
Width	4.82mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

onsemi D45H11G | Future Electronics

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Datasheets

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Lifecycle Status Indicator

Production

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Footprint

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Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	D45H11	Obsolete
STMicroelectronics	D45H11	Production
onsemi	MJE15033G	Production
STMicroelectronics	BD538	Obsolete
STMicroelectronics	BD906	Obsolete
STMicroelectronics	2N6490	Obsolete
onsemi	TIP32CG	Production
STMicroelectronics	TIP32C	Production
STMicroelectronics	TIP42C	Production
onsemi	TIP42	Obsolete

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