Discrete Semiconductors > Transistors > BJTs

EMD22T2R - ROHM

Bipolar (BJT) Array Transistor, NPN, PNP, 50 V, 150 mW, 100 mA, 80, EMT RoHS Compliant: Yes

Technical Details

Case/Package	SMD/SMT
Collector Emitter Breakdown Voltage	50V
Collector Emitter Voltage (VCEO)	50V
Continuous Collector Current	100mA
Current Rating	100mA
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Dual
hFE Min	80
Introduction Date	2003-12-18
Lead Free	Lead Free
Lifecycle Status	Production
Max Breakdown Voltage	50V
Max Collector Current	100mA
Max Operating Temperature	150°C
Max Output Current	100mA
Max Power Dissipation	150mW
Min Operating Temperature	-55°C
Mount	Surface Mount
Number of Elements	2
Number of Pins	6
Number of Terminals	6
Operating Supply Voltage	50V
Polarity	NPN, PNP
Power Dissipation	150mW
Radiation Hardening	No
REACH SVHC	Yes
RoHS	Compliant
Transition Frequency	250MHz

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : Yes

Images

ROHM EMD22T2R | Farnell

Farnell

Datasheets

Lifecycle Status Indicator

Production

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
Toshiba	RN4908(TE85L)	Obsolete
Toshiba	RN4608(TE85L)	Obsolete
Diodes Inc.	DCX123JH-7	Production
ROHM	UMD22NTR	Production
Toshiba	HN7G04FU-A	Obsolete
ROHM	EMD59T2R	Production
ROHM	EMD62T2R	Production
Toshiba	RN4962FE	EOL
Toshiba	RN4988FE	Production
Toshiba	RN4990FE	Production

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USD

1

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DE: 0

$

0.2663

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DE: 0

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0.2281

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Non-Authorized Distributors

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Win Source

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