Power Field-Effect Transistor, 2A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...

Technical Details

Case/Package DPAK
Continuous Drain Current (ID) 2A
Drain to Source Breakdown Voltage -250V
Drain to Source Resistance
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 25ns
Gate to Source Voltage (Vgs) 30V
Introduction Date 1999-12-07
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 37W
Min Breakdown Voltage 250V
Min Operating Temperature -55°C
Number of Elements 1
Number of Terminals 2
Power Dissipation 2.5W
REACH SVHC Yes
Rise Time 40ns
RoHS Non-Compliant
Turn-Off Delay Time 12ns

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

Datasheets

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Fairchild Semiconductor Obsolete
STMicroelectronics Obsolete
Fairchild Semiconductor Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi EOL
Diodes Inc. Obsolete
Diodes Inc. Production

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