FQI12N60 - Fairchild Semiconductor
Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
Technical Details
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Resistance | 700mΩ |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 180W |
| Min Breakdown Voltage | 600V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Infineon | Obsolete | ||
| STMicroelectronics | Production | ||
| Infineon | Obsolete | ||
| NEC | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| STMicroelectronics | Production |
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