HUF75339G3 - onsemi

75 A 55 V 0.012 Ohm N-channel Si Power Mosfet TO-247

Technical Details

Case/Package TO-247-3
Continuous Drain Current (ID) 75A
Current Rating 75A
Drain to Source Breakdown Voltage 55V
Drain to Source Resistance 12mΩ
Drain to Source Voltage (Vdss) 55V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 25ns
Gate to Source Voltage (Vgs) 20V
Height 24.75mm
Input Capacitance 2nF
Introduction Date 1999-06-01
Lead Free Lead Free
Lifecycle Status Obsolete
Max Junction Temperature (Tj) 175°C
Max Operating Temperature 175°C
Max Power Dissipation 200W
Min Breakdown Voltage 55V
Min Operating Temperature -55°C
Mount Through Hole
Number of Channels 1
Number of Elements 1
Number of Terminals 3
Power Dissipation 200W
Rds On Max 12mΩ
REACH SVHC Yes
Rise Time 60ns
RoHS Compliant
Turn-Off Delay Time 20ns
Turn-On Delay Time 15ns
Voltage Rating (DC) 55V

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

onsemi HUF75339G3 | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete

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