Uncategorized
IFN5566 - InterFET
RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-71
Technical Details
| Body Material | Metal |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 650mW |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| REACH SVHC | Yes |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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