Uncategorized
IFN5912 - InterFET
RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-78
Technical Details
| Body Material | Metal |
| Case/Package | TO-78-3 |
| Continuous Drain Current (ID) | 5mA |
| Drain to Source Voltage (Vdss) | 10V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Dual |
| Gate to Source Voltage (Vgs) | -25V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 2 |
| Number of Terminals | 8 |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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