IMD3AT108 - ROHM
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Technical Details
| Case/Package | SMD/SMT |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Continuous Collector Current | 50mA |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.2mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 3mm |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 300mW |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Operating Supply Voltage | 50V |
| Packaging | Tape & Reel (TR) |
| Polarity | NPN, PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 250MHz |
| Width | 1.8mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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