IPB80P04P4L06ATMA1 - Infineon
-40V, P-Ch, 6.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2, PG-TO263-3, RoHS
Technical Details
| Case/Package | TO-263-3 |
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Resistance | 6.4mΩ |
| Drain to Source Voltage (Vdss) | -40V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.58nF |
| Introduction Date | 2011-04-18 |
| Lead Free | Contains Lead |
| Lifecycle Status | Obsolete |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 88W |
| Min Breakdown Voltage | 40V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| On-State Resistance | 6.4mΩ |
| Package Quantity | 1000 |
| Packaging | Tape & Reel |
| Power Dissipation | 88W |
| Rds On Max | 6.4mΩ |
| REACH SVHC | No |
| Rise Time | 12ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 17ns |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
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