IPD80R1K0CEBTMA1 - Infineon

MOSFET N-CH 800V 5.7A TO252-3 N-Channel 800 V 5.7A (Tc) 83W (Tc) Surface Mount PG-TO252-3-11

Technical Details

Case/Package TO-252-3
Contact Plating Tin
Continuous Drain Current (ID) 5.7A
Drain to Source Resistance 950mΩ
Drain to Source Voltage (Vdss) 800V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 8ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 785pF
Introduction Date 2016-11-18
Lead Free Lead Free
Lifecycle Status Obsolete
Max Dual Supply Voltage 800V
Max Operating Temperature 150°C
Max Power Dissipation 83W
Min Breakdown Voltage 800V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Pins 3
Number of Terminals 2
On-State Resistance 950mΩ
Package Quantity 2500
Packaging Tape & Reel
Power Dissipation 83W
Rds On Max 950mΩ
REACH SVHC No
Rise Time 15ns
RoHS Compliant
Turn-Off Delay Time 72ns
Turn-On Delay Time 25ns
Weight 3.949996g

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

Infineon IPD80R1K0CEBTMA1 | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Infineon Production
Infineon Unknown
Infineon Obsolete
Infineon Obsolete

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