IXFN170N30P - IXYS

Single N-Channel 300 V 890 W 258 nC Chassis Mount Power Mosfet - SOT227B

Technical Details

Case/Package SOT-227-4
China RoHS Compliant
Contact Plating Nickel
Continuous Drain Current (ID) 138A
Drain to Source Breakdown Voltage 300V
Drain to Source Resistance 18mΩ
Drain to Source Voltage (Vdss) 300V
Element Configuration Single
Fall Time 16ns
Gate to Source Voltage (Vgs) 30V
Input Capacitance 20nF
Lead Free Lead Free
Max Operating Temperature 150°C
Max Power Dissipation 890W
Min Breakdown Voltage 300V
Min Operating Temperature -55°C
Mount Chassis Mount, Screw
Number of Elements 1
Number of Pins 4
Number of Terminals 4
Power Dissipation 890W
Radiation Hardening No
Rds On Max 18mΩ
REACH SVHC Yes
Rise Time 29ns
RoHS Compliant
Turn-Off Delay Time 79ns

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

IXYS IXFN170N30P | TME

TME

Lifecycle Status Indicator

   Unknown

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DigiKey
DE: 2
$ 48.8166 36.7357 36.7357 48.8166 48.8166 48.8166
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TME
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$ 47.8304 43.2692 43.2692 43.2692 43.2692 43.2692
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Microchip USA
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Component Stockers USA
US: 1
$ 45.75 45.75 45.75 45.75 45.75 45.75
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Worldway Electronics
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Fly-Wing Technology
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