IXTF1R4N450 - IXYS

Power Field-Effect Transistor

Technical Details

Continuous Drain Current (ID) 1.4A
Drain to Source Voltage (Vdss) 4.5kV
Input Capacitance 3.3nF
Max Operating Temperature 150°C
Max Power Dissipation 190W
Min Operating Temperature -55°C
Mount Through Hole
Rds On Max 40Ω
REACH SVHC Yes
RoHS Compliant

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

IXYS IXTF1R4N450 | TME

TME

Lifecycle Status Indicator

   Unknown

Authorized Distributors

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DigiKey
DE: 0
$ 86.7604 86.7604 68.9576 68.9576 68.9576 68.9576
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TME
PL: 0
$ 130.6706 103.9201 93.3185 93.3185 93.3185 93.3185
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Mouser
US: 0
$ 90.60 74.66 74.66 68.62 68.62 68.62
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Anglia
GB: 0
$ 103.222 90.1168 81.1079 81.1079 81.1079 81.1079
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Non-Authorized Distributors

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Worldway Electronics
HK: 4941
$ 15.8579 15.8579 15.3725 14.5634 14.5634
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Fly-Wing Technology
HK: 109
$ 71.9928 65.7254 65.7254 59.455 59.455 59.455
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Eurochip Technologies LTD
IL: 47
$ 61.41 61.41 61.41 61.41 61.41 61.41
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ODG (Origin Data Global)
CN: 725
$ 118.2482 105.1095 105.1095 105.1095 105.1095 105.1095
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AERI
US: 9526
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Suntronic
CN: 351
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