IXTT02N450HV - IXYS
Single N-Channel 4500 V 625 Ohm 10.6 nC 113 W Silicon SMT Mosfet - TO-268
Technical Details
| Case/Package | TO-268 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 4.5kV |
| Drain to Source Resistance | 625Ω |
| Drain to Source Voltage (Vdss) | 4.5kV |
| Element Configuration | Single |
| Fall Time | 143ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 256pF |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 113W |
| Min Breakdown Voltage | 4.5kV |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Power Dissipation | 113W |
| Rds On Max | 750Ω |
| REACH SVHC | No |
| Rise Time | 48ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 28ns |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
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