Uncategorized
JANTXV2N5116 - Solitron Devices
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18
Technical Details
| Body Material | Metal |
| Gate to Source Voltage (Vgs) | 25V |
| Lifecycle Status | Production |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Radiation Hardening | No |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Central Semiconductor | Production | ||
| Vishay | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Solitron Devices | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Calogic | Production | ||
| Texas Instruments | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Motorola | Obsolete |
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