JANTXV2N6308 - Solitron Devices
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
Technical Details
| Body Material | Metal |
| Collector Emitter Voltage (VCEO) | 350V |
| Country of Origin | USA |
| Export Control Classification Number (ECCN) Code | EAR99 |
| hFE Min | 12 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1993-10-25 |
| Lifecycle Status | Production |
| Max Collector Current | 8A |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 125W |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Power Dissipation | 125W |
| RoHS | Non-Compliant |
| Transition Frequency | 5MHz |
Compliance
RoHS : Unconfirmed
Images
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