MJB45H11G - onsemi

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Technical Details

Case/Package D2PAK
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 5V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1V
Collector Emitter Voltage (VCEO) 80V
Country of Origin Mainland China, Malaysia
Current Rating -10A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 40MHz
Gain Bandwidth Product 40MHz
hFE Min 40
Introduction Date 2001-04-01
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Collector Current 10A
Max Frequency 40MHz
Max Operating Temperature 150°C
Max Power Dissipation 50W
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Polarity PNP
Power Dissipation 2W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080
Transition Frequency 40MHz
Voltage Rating (DC) -80V

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi MJB45H11G | Farnell

Farnell

Lifecycle Status Indicator

   Production
Symbol
Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
onsemi Obsolete
onsemi Obsolete
onsemi Production
onsemi Production
onsemi Production
onsemi Obsolete
onsemi Obsolete
onsemi Production
onsemi Obsolete

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