Discrete Semiconductors > Transistors > BJTs

MJE18008G - onsemi

on Semi MJE18008G NPN High Voltage Bipolar Transistor, 8 A, 450V, 3-PIN TO-220AB

Technical Details

Case/Package	TO-220-3
China RoHS	Non-Compliant
Collector Base Voltage (VCBO)	1kV
Collector Emitter Breakdown Voltage	450V
Collector Emitter Saturation Voltage	300mV
Collector Emitter Voltage (VCEO)	450V
Contact Plating	Tin
Country of Origin	Mainland China
Current Rating	8A
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Emitter Base Voltage (VEBO)	9V
Frequency	13MHz
Gain Bandwidth Product	13MHz
Height	15.75mm
hFE Min	6
Introduction Date	1993-10-01
Lead Free	Lead Free
Length	10.28mm
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Collector Current	8A
Max Frequency	13MHz
Max Operating Temperature	150°C
Max Power Dissipation	125W
Min Operating Temperature	-65°C
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Packaging	Bulk
Polarity	NPN
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Transition Frequency	13MHz
Voltage Rating (DC)	450V
Width	4.82mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

onsemi MJE18008G | RS

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Datasheets

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Lifecycle Status Indicator

Production

Symbol

MJE18008G Symbol - onsemi

MJE18008G Symbol - onsemi

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Footprint

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Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	MJE18008	Obsolete
onsemi	MJE18002	Obsolete
onsemi	BUL45G	Obsolete
ROHM	2SD1505	Obsolete
STMicroelectronics	BUL118D	Obsolete
onsemi	BUL147G	Obsolete
onsemi	BUL44	Obsolete
NTE Electronics	NTE241	Obsolete
Sanken	2SC3179	Obsolete
Sanyo	2SC4159	Obsolete

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SKU

Stock

USD

1

10

50

100

1000

10000

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RS

DE: 174

$

2.4075

1.854

1.5717

1.5717

RS

DE: 15

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3.7179

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3.7179

3.7179

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Future Electronics

CA: 350

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1.01

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CA: 0

$

1.01

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Farnell

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3.8215

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Master Electronics

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0.937

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0.937

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1.0167

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1.375

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DE: 0

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3.3284

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US: 15101

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0.53

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1.6217

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Chipsmall Limited

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2.426

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