MJE3055TTU - onsemi

Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt

Technical Details

Case/Package TO-220-3
Collector Base Voltage (VCBO) 70V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.1V
Collector Emitter Voltage (VCEO) 60V
Country of Origin Mainland China
Current Rating 10A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 2MHz
Gain Bandwidth Product 2MHz
Height 20.4mm
hFE Min 5
Harmonized Tariff Schedule (HTS) Code 8541.21.00.95
Introduction Date 1999-01-01
Lead Free Lead Free
Length 9.9mm
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 60V
Max Collector Current 10A
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 75W
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 600mW
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080
Transition Frequency 2MHz
Voltage Rating (DC) 60V
Weight 1.8g
Width 4.5mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi MJE3055TTU | Farnell

Farnell

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
STMicroelectronics Production
MCC Obsolete
onsemi Obsolete
onsemi Production
STMicroelectronics Obsolete
STMicroelectronics Obsolete
Fairchild Semiconductor Obsolete
onsemi Production
Multicomp Production

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