MMBT2222AWT3G - onsemi

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

Technical Details

Case/Package SC
China RoHS Compliant
Collector Base Voltage (VCBO) 75V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1V
Collector Emitter Voltage (VCEO) 40V
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 6V
Frequency 300MHz
Gain Bandwidth Product 300MHz
hFE Min 40
Introduction Date 2011-11-08
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Collector Current 600mA
Max Operating Temperature 150°C
Max Power Dissipation 150mW
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Tape and Reel
Polarity NPN
Power Dissipation 150mW
REACH SVHC Yes
RoHS Compliant
Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Transition Frequency 300MHz

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

onsemi MMBT2222AWT3G | Master Electronics

Master Electronics

Lifecycle Status Indicator

   Production
Symbol
Footprint

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