MMBT5401-7-F - Diodes Inc.
Bipolar (BJT) Single Transistor, PNP, 150 V, 600 mA, 310 mW, SOT-23, Surface Mount
Technical Details
| Case/Package | SOT-23 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | -150V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Continuous Collector Current | -200mA |
| Current | 2A |
| Current Rating | -200mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1.1mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 310mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 100MHz |
| Voltage | 150V |
| Voltage Rating (DC) | -150V |
| Weight | 7.994566mg |
| Width | 1.4mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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