MMBT5551-7 - Diodes Inc.

Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon

Technical Details

Case/Package SOT-23
Collector Base Voltage (VCBO) 180V
Collector Emitter Breakdown Voltage 160V
Collector Emitter Voltage (VCEO) 160V
Continuous Collector Current 200mA
Current Rating 200mA
Element Configuration Single
Emitter Base Voltage (VEBO) 6V
Frequency 300MHz
Gain Bandwidth Product 300MHz
Height 1mm
hFE Min 30
Lead Free Contains Lead
Length 3.05mm
Lifecycle Status Obsolete
Max Breakdown Voltage 160V
Max Collector Current 200mA
Max Frequency 300MHz
Max Operating Temperature 150°C
Max Power Dissipation 300mW
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 300mW
Radiation Hardening No
REACH SVHC No
RoHS Non-Compliant
Transition Frequency 100MHz
Voltage Rating (DC) 160V
Weight 7.994566mg
Width 1.4mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

Lifecycle Status Indicator

   Obsolete

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