MT3S45T - Toshiba
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Technical Details
| Collector Emitter Voltage (VCEO) | 4.5V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| hFE Min | 70 |
| Introduction Date | 2002-12-04 |
| Lifecycle Status | Production |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 100mW |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| RoHS | Non-Compliant |
| Transition Frequency | 18GHz |
Compliance
RoHS : Unconfirmed
Images
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only