NJVMJD31T4G - onsemi
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Technical Details
| Case/Package | DPAK |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Continuous Collector Current | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 15W |
| Min Operating Temperature | -65°C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| REACH SVHC | No |
| RoHS | Compliant |
| Transition Frequency | 3MHz |
| Weight | 260.39037mg |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| onsemi | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Central Semiconductor | Obsolete | ||
| onsemi | Production | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Production | ||
| Central Semiconductor | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete |
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Non-Authorized Distributors
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