Discrete Semiconductors > Transistors > BJTs

NJW1302G - onsemi

Trans GP BJT PNP 250V 15A 200000mW 3-Pin(3+Tab) TO-3P Tube / TRANS PNP 250V 15A TO-3P

Technical Details

Case/Package	TO-218-3
China RoHS	Non-Compliant
Collector Base Voltage (VCBO)	250V
Collector Emitter Breakdown Voltage	250V
Collector Emitter Saturation Voltage	600mV
Collector Emitter Voltage (VCEO)	250V
Country of Origin	South Korea
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Emitter Base Voltage (VEBO)	5V
Frequency	30MHz
Gain Bandwidth Product	30MHz
Height	20.1mm
hFE Min	45
Introduction Date	2007-09-27
Lead Free	Lead Free
Length	15.8mm
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Breakdown Voltage	60V
Max Collector Current	15A
Max Frequency	1MHz
Max Operating Temperature	150°C
Max Power Dissipation	200W
Min Operating Temperature	-65°C
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Polarity	PNP
Power Dissipation	200W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Schedule B	8541290080
Transition Frequency	30MHz
Width	5mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

onsemi NJW1302G | Farnell

Farnell

Datasheets

Lifecycle Status Indicator

Production

Symbol

NJW1302G Symbol - onsemi

NJW1302G Symbol - onsemi

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Footprint

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Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
Toshiba	2SA1804-O	Obsolete
Sanken	2SA1490	Obsolete
Fuji	2SB757	Obsolete
Toshiba	2SA1943N	Production
Allegro MicroSystems	2SA1695	Production
Allegro MicroSystems	2SA1186	Obsolete
Panasonic	2SA1185	Unknown
Fairchild Semiconductor	KSA1962OTU	Obsolete
Sanken	2SA1205	Obsolete
Toshiba	2SA1939O	Obsolete

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