NP109N055PUK-E1-AY - Renesas
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Technical Details
| Case/Package | TO-263 |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 55V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Fall Time | 11ns |
| Part Family | NP109N055PUK |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.65mm |
| Harmonized Tariff Schedule (HTS) Code | 8541.21.0095 |
| Input Capacitance | 11.25nF |
| Introduction Date | 2011-12-09 |
| Length | 10mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Junction Temperature (Tj) | 175°C |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 250W |
| Min Operating Temperature | -55°C |
| MSL | 1 |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Packaging | Tape & Reel (TR) |
| Rds On Max | 2.2mΩ |
| REACH SVHC | Yes |
| Rise Time | 14ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 105ns |
| Turn-On Delay Time | 30ns |
| Width | 9mm |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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