NST856BF3T5G - onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon

Technical Details

Case/Package SOT-1123
China RoHS Compliant
Collector Base Voltage (VCBO) 80V
Collector Emitter Breakdown Voltage 65V
Collector Emitter Voltage (VCEO) 65V
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 100MHz
Gain Bandwidth Product 100MHz
hFE Min 220
Introduction Date 2009-01-26
Lead Free Lead Free
Lifecycle Status EOL
Manufacturer Lifecycle Status LAST SHIPMENTS
Max Collector Current 100mA
Max Operating Temperature 150°C
Max Power Dissipation 347mW
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Tape and Reel
Polarity PNP
Power Dissipation 347mW
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Transition Frequency 100MHz

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

onsemi NST856BF3T5G | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   EOL
Symbol
Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
onsemi Obsolete
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Leshan Radio Co. Unknown
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onsemi Production
onsemi Production
Taiwan Semiconductor Production
onsemi Production

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