MMBTA13LT3G - onsemi

Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Technical Details

Case/Package SOT-23-3
China RoHS Compliant
Collector Base Voltage (VCBO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Voltage (VCEO) 30V
Element Configuration Single
Emitter Base Voltage (VEBO) 10V
Halogen Free Halogen Free
Height 1.01mm
hFE Min 10000
Lead Free Lead Free
Length 3.04mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Collector Current 300mA
Max Operating Temperature 150°C
Max Power Dissipation 225mW
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Tape and Reel
Polarity NPN
Power Dissipation 225mW
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Transition Frequency 125MHz
Width 1.4mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

onsemi MMBTA13LT3G | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Production
Symbol
Footprint

Alternatives (Possible Substitutes)

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