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OP505B - Optek
OP505 Series 935 nm 25° 5.95 mA Infrared Selected NPN Silicon Phototransistor
Technical Details
| Case/Package | T |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Country of Origin | Mexico |
| Dark Current | 100nA |
| Height | 5.84mm |
| Housing Material | Plastic |
| Introduction Date | 1993-01-01 |
| Lead Free | Lead Free |
| Lead Length | 12.7mm |
| Length | 4.19mm |
| Lifecycle Status | Production |
| Max Collector Current | 5.95mA |
| Max Operating Temperature | 100°C |
| Max Power Dissipation | 100mW |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Number of Pins | 2 |
| Orientation | Top View |
| Peak Wavelength | 930nm |
| Polarity | NPN |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541407080 |
| Shape | Round |
| Viewing Angle | 25° |
| Wavelength | 935nm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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