OP800B - Optek
NPN silicon phototransistor, Voltage - Collector Emitter Breakdown 30V, TO-18-3, RoHS
Technical Details
| Case/Package | TO-18-3 |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 5V |
| Country of Origin | Mexico |
| Dark Current | 100nA |
| Export Control Classification Number (ECCN) Code | 3A001.a.2.b |
| Fall Time | 7µs |
| Harmonized Tariff Schedule (HTS) Code | 8541.40.70.80 |
| Introduction Date | 1993-01-01 |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 125°C |
| Max Power Dissipation | 250mW |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Orientation | Top View |
| Packaging | Bulk |
| Peak Wavelength | 890nm |
| Polarity | NPN |
| Power Dissipation | 250mW |
| REACH SVHC | Yes |
| Rise Time | 7µs |
| RoHS | Compliant |
| Shape | Round |
| Wavelength | 890nm |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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