OPB810L51 - Optek

OPB810W Series 30 V 890 nm 50 mA Phototransistor Wide Gap Slotted Optical Switch

Technical Details

Collector Emitter Breakdown Voltage 30V
Collector Emitter Voltage (VCEO) 30V
Country of Origin Mexico
Dark Current 100nA
Forward Current 50mA
Forward Voltage 1.7V
Height 11.1mm
Housing Material Plastic
Input Current 20mA
Introduction Date 1990-01-01
Lead Free Lead Free
Lifecycle Status Production
Max Collector Current 30mA
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Mount Screw, Through Hole
Number of Channels 1
Number of Circuits 1
Number of Elements 1
Number of Pins 4
Operating Supply Voltage 2V
Output Configuration Phototransistor
Output Type Phototransistor
Output Voltage 30V
Packaging Bulk
Power Dissipation 100mW
Radiation Hardening No
REACH SVHC Yes
Reverse Breakdown Voltage 2V
Reverse Voltage (DC) 2V
RoHS Compliant
Schedule B 8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000
Sensing Distance 9.525mm
Touchscreen Infrared (IR)
Wavelength 890nm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

Optek OPB810L51 | Newark

Newark

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

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