Circuit Protection > TVS Diodes

P6SMB150A - Taiwan Semiconductor

Trans Voltage Suppressor Diode, 600W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA

Breakdown Voltage	150V
Case/Package	SMB
China RoHS	Non-Compliant
Clamping Voltage	207V
Contact Plating	Tin
Country of Origin	Mainland China, Taiwan
Direction	Unidirectional
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Forward Voltage	1V
Height	2.41mm
Harmonized Tariff Schedule (HTS) Code	8541.10.00.50
Introduction Date	2005-06-22
Lead Free	Lead Free
Length	4.75mm
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Breakdown Voltage	157.5V
Max Forward Surge Current (Ifsm)	2.5A
Max Junction Temperature (Tj)	150°C
Max Operating Temperature	150°C
Max Power Dissipation	3W
Max Repetitive Reverse Voltage (Vrrm)	250V
Max Reverse Leakage Current	1µA
Max Surge Current	100A
Min Breakdown Voltage	142.5V
Min Operating Temperature	-65°C
Mount	Surface Mount
Number of Channels	1
Number of Elements	1
Number of Pins	2
Number of Terminals	2
Operating Supply Voltage	128V
Peak Pulse Current	3A
Peak Pulse Power	600W
Polarity	Unidirectional
Power Dissipation	200mW
REACH SVHC	No
Reverse Recovery Time	50ns
Reverse Standoff Voltage	128V
RoHS	Compliant
Test Current	1mA
Width	3.73mm

RoHS : Unconfirmed

REACH SVHC : No

Production

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator
Littelfuse	P6SMBJ150	Obsolete
Diotec	P6SMBJ130A	Production
Central Semiconductor	P6SMB150A TR13	Unknown
Littelfuse	P6SMBJ150A	Obsolete
onsemi	P6SMB150AT3	Obsolete
Littelfuse	P6SMB150AT3G	Obsolete
Vishay	P6SMB150A-E3/5B	Production
Vishay	P6SMB150AHE3/5B	Obsolete
Rectron	P6FMBJ150A-W	Production
Littelfuse	P6SMB150	Obsolete