PESD5V2S18U,118 - NXP Semiconductors
27.5 W Bidirectional 18 Element Silicon Tvs Diode MO-150AE
Technical Details
| Breakdown Voltage | 6.8V |
| Capacitance | 100pF |
| Case/Package | SSOP |
| China RoHS | Compliant |
| Clamping Voltage | 12V |
| Composition | Zener |
| Contact Plating | Tin |
| Depth | 5.4mm |
| Direction | Unidirectional |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Harmonized Tariff Schedule (HTS) Code | 8541.10.00.50 |
| Introduction Date | 2004-02-16 |
| Leakage Current | 1µA |
| Length | 7.4mm |
| Lifecycle Status | Obsolete |
| Max Breakdown Voltage | 7.2V |
| Max Operating Temperature | 150°C |
| Max Surge Current | 10A |
| Min Breakdown Voltage | 6.4V |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Channels | 18 |
| Number of Elements | 18 |
| Number of Pins | 20 |
| Number of Terminals | 20 |
| Number of Unidirectional Channels | 18 |
| Packaging | Tape and Reel |
| Peak Pulse Current | 10A |
| Peak Pulse Power | 27.5W |
| Peak Reverse Current | 1µA |
| Polarity | Bidirectional |
| Power Line Protection | No |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 5.2V |
| RoHS | Compliant |
| Termination | SMD/SMT |
| Working Voltage | 5.2V |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
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