Uncategorized
PMBFJ109 - NXP Semiconductors
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET
Technical Details
| China RoHS | Compliant |
| Contact Plating | Tin |
| Drain to Source Resistance | 12Ω |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 25V |
| Introduction Date | 1991-01-30 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 250mW |
| Min Breakdown Voltage | 25V |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| NXP Semiconductors | Obsolete | ||
| Vishay | Obsolete | ||
| Vishay | Obsolete | ||
| Vishay | Production | ||
| Calogic | Production | ||
| Vishay | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| Calogic | Production | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete |
Non-Authorized Distributors
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only