PN2907ATFR - onsemi
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Technical Details
| Case/Package | TO-92-3 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | -60V |
| Collector Emitter Saturation Voltage | -1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Contact Plating | Tin |
| Country of Origin | Mainland China |
| Current Rating | -800mA |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 8.77mm |
| hFE Min | 50 |
| Harmonized Tariff Schedule (HTS) Code | 8541.21.00.95 |
| Introduction Date | 2003-04-05 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 800mA |
| Max Frequency | 200MHz |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 625mW |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape & Reel |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 200MHz |
| Voltage Rating (DC) | -60V |
| Weight | 240mg |
| Width | 4.19mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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