PSMN010-25YLC,115 - NXP Semiconductors
Power Field-Effect Transistor, 39A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Technical Details
| Case/Package | SO |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 39A |
| Drain to Source Breakdown Voltage | 22.5V |
| Drain to Source Resistance | 10.6mΩ |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 4.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 678pF |
| Lead Free | Lead Free |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 30W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 5 |
| Packaging | Digi-Reel® |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 10.6mΩ |
| REACH SVHC | No |
| Rise Time | 9.8ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 11.5ns |
| Turn-On Delay Time | 10.7ns |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
Images
Rochester Electronics
Authorized Distributors
| Distributor | SKU | Stock | USD | 1 | 10 | 50 | 100 | 1000 | 10000 | Buy |
|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics |
US: 1230
|
$ | 0.2979 | 0.2473 | 0.2204 | |||||
Non-Authorized Distributors
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