PSMN039-100YS,115 - Nexperia
Power Field-Effect Transistor, 28.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Technical Details
| Case/Package | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 28.1A |
| Drain to Source Breakdown Voltage | 90V |
| Drain to Source Resistance | 39.5mΩ |
| Drain to Source Voltage (Vdss) | 100V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.847nF |
| Introduction Date | 2010-01-14 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | RELEASED FOR SUPPLY |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 74W |
| Min Breakdown Voltage | 100V |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Packaging | Tape & Reel |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| Rds On Max | 39.5mΩ |
| REACH SVHC | No |
| Rise Time | 8ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 11ns |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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