PSMN3R2-25YLC,115 - NXP Semiconductors
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Technical Details
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 3.4mΩ |
| Drain to Source Voltage (Vdss) | 25V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.781nF |
| Introduction Date | 2011-05-02 |
| Lead Free | Lead Free |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 79W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 5 |
| Packaging | Digi-Reel® |
| Power Dissipation | 79W |
| Radiation Hardening | No |
| Rds On Max | 3.4mΩ |
| REACH SVHC | No |
| Resistance | 4.45MΩ |
| Rise Time | 19ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 19ns |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
Images
Rochester Electronics
Authorized Distributors
| Distributor | SKU | Stock | USD | 1 | 10 | 50 | 100 | 1000 | 10000 | Buy |
|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics |
US: 399
|
$ | 0.5668 | 0.4704 | 0.4194 | |||||
Non-Authorized Distributors
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