PT4800FE000F - Sharp

Phototransistor IR Chip 860nm 2-Pin Thin Type

Technical Details

Case/Package Radial
Collector Emitter Breakdown Voltage 35V
Collector Emitter Voltage (VCEO) 6V
Dark Current 100nA
Fall Time 3.5µs
Introduction Date 1994-01-01
Lead Free Lead Free
Lens Color Black
Lens Style Domed
Lifecycle Status Production
Max Collector Current 20mA
Max Operating Temperature 85°C
Max Power Dissipation 75mW
Min Operating Temperature -25°C
Mount Through Hole
Number of Circuits 1
Number of Elements 1
Number of Pins 2
Orientation Side View
Output Current 20mA
Peak Wavelength 860nm
Polarity NPN
Power Dissipation 75mW
Radiation Hardening No
REACH SVHC Yes
Rise Time 3µs
RoHS Compliant
Shape Round
Wavelength 860nm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Sharp Obsolete

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