PUMD12,135 - Nexperia
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ
Technical Details
| Case/Package | TSSOP |
| China RoHS | Compliant |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Contact Plating | Tin |
| Element Configuration | Dual |
| hFE Min | 80 |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | RELEASED FOR SUPPLY |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 200mW |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Packaging | Tape & Reel (TR) |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 180MHz |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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Rochester Electronics
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