RF1S30P06SM9A - onsemi

30 A 60 V 0.065 Ohm P-channel Si Power Mosfet TO-263AB

Technical Details

Continuous Drain Current (ID) 30A
Drain to Source Breakdown Voltage -60V
Drain to Source Resistance 65mΩ
Drain to Source Voltage (Vdss) -60V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 18ns
Gate to Source Voltage (Vgs) 20V
Height 5.08mm
Introduction Date 1998-09-01
Lifecycle Status Obsolete
Max Junction Temperature (Tj) 175°C
Max Operating Temperature 175°C
Max Power Dissipation 135W
Min Breakdown Voltage 60V
Min Operating Temperature -55°C
Number of Channels 1
Number of Elements 1
Number of Terminals 2
Power Dissipation 135W
Rise Time 23ns
RoHS Non-Compliant
Turn-Off Delay Time 28ns
Turn-On Delay Time 15ns

Compliance

   RoHS : Unconfirmed

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Lifecycle Status Indicator

   Obsolete
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Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Fairchild Semiconductor Obsolete
Fairchild Semiconductor Obsolete
onsemi Obsolete
onsemi Production
Vishay Obsolete
Infineon Production
Vishay Production
Vishay Production
Vishay Production
Vishay Production

See more alternatives See less alternatives

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