RN1301(TE85L,F) - Toshiba

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Technical Details

Case/Package SC
Collector Emitter Breakdown Voltage 50V
Collector Emitter Voltage (VCEO) 50V
Continuous Collector Current 100mA
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
hFE Min 30
Introduction Date 1998-07-23
Lead Free Lead Free
Lifecycle Status Production
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Operating Temperature 150°C
Max Power Dissipation 100mW
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Digi-Reel®
Polarity NPN
Power Dissipation 100mW
Radiation Hardening No
RoHS Compliant
Transition Frequency 200MHz

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No

Images

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

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