RN4988FE(TE85L,F) - Toshiba
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP, Silicon
Technical Details
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 300mV |
| hFE Min | 80 |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Cut Tape (CT) |
| RoHS | Compliant |
| Transition Frequency | 250MHz |
Compliance
RoHS : Unconfirmed
Images
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