Mosfet Silicon Carbide Sic 1200V

Technical Details

Continuous Drain Current (ID) 16A
Drain to Source Resistance 196mΩ
Lifecycle Status Production
Max Operating Temperature 175°C
Max Power Dissipation 122W
Min Breakdown Voltage 1.2kV
Min Operating Temperature -55°C
Number of Elements 1
Number of Terminals 7
RoHS Compliant

Compliance

   RoHS : Unconfirmed

Images

Sangdest Microelectronics S2M0160120J | TME

TME

Lifecycle Status Indicator

   Production

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