SDTC114EET1G - onsemi

50 V 100 mA 200 mW NPN Pre-Biased Bipolar Transistor (BJT) - SC-75, SOT-416

Technical Details

China RoHS Compliant
Collector Emitter Breakdown Voltage 50V
Collector Emitter Voltage (VCEO) 50V
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Halogen Free Halogen Free
hFE Min 35
Introduction Date 1996-07-29
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Collector Current 100mA
Max Operating Temperature 150°C
Max Power Dissipation 300mW
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Tape and Reel
Polarity NPN
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

onsemi SDTC114EET1G | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Production
Symbol
Footprint

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