SDTC114EET1G - onsemi
50 V 100 mA 200 mW NPN Pre-Biased Bipolar Transistor (BJT) - SC-75, SOT-416
Technical Details
| China RoHS | Compliant |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Country of Origin | Mainland China |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Halogen Free | Halogen Free |
| hFE Min | 35 |
| Introduction Date | 1996-07-29 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 300mW |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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