SI7880DP-T1 - Vishay
Power Field-Effect Transistor, 18A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 3mΩ |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 2003-08-12 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 5.4W |
| Min Breakdown Voltage | 30V |
| Number of Elements | 1 |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| REACH SVHC | Yes |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Vishay | Obsolete | ||
| Vishay | Obsolete | ||
| Texas Instruments | Production | ||
| Alpha & Omega Semiconductor | Production | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Diodes Inc. | Production | ||
| onsemi | Production | ||
| Diodes Inc. | NRND | ||
| Diodes Inc. | Obsolete |
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