SI8416DB-T2-E1 - Vishay
VISHAY SI8416DB-T2-E1 MOSFET Transistor, N Channel, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV
Technical Details
| Case/Package | BGA |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 8V |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 310µm |
| Input Capacitance | 1.47nF |
| Length | 1.5mm |
| Lifecycle Status | Production |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 13W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 6 |
| Power Dissipation | 2.77W |
| Radiation Hardening | No |
| Rds On Max | 23mΩ |
| REACH SVHC | Yes |
| Rise Time | 30ns |
| RoHS | Compliant |
| Threshold Voltage | 350mV |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 13ns |
| Width | 1mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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