SI8435DB-T1-E1 - Vishay
Power Field-Effect Transistor, 6.72A I(D), 20V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 6.72A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 75mΩ |
| Fall Time | 91ns |
| Gate to Source Voltage (Vgs) | 5V |
| Input Capacitance | 1.6nF |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 6.25W |
| Min Breakdown Voltage | 20V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Packaging | Digi-Reel® |
| Rds On Max | 41mΩ |
| REACH SVHC | Yes |
| Rise Time | 29ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 230ns |
| Turn-On Delay Time | 15ns |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
Images
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only