SIHF830AS-GE3 - Vishay
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Technical Details
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 1.4Ω |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 2000-05-11 |
| Lifecycle Status | Production |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 74W |
| Min Breakdown Voltage | 500V |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Vishay | Production | ||
| Vishay | Obsolete | ||
| Vishay | Production | ||
| Vishay | Production | ||
| Vishay | Obsolete | ||
| Vishay | Production | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete | ||
| NXP Semiconductors | Obsolete |
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