SMUN5313DW1T1G - onsemi
Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 50 V, 100 mA, 47 kohm
Technical Details
| Case/Package | SOT-363-6 |
| China RoHS | Compliant |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Continuous Collector Current | 100mA |
| Country of Origin | Mainland China |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Dual |
| hFE Min | 80 |
| Introduction Date | 1999-01-01 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 256mW |
| Min Operating Temperature | -55°C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Weight | 7.512624mg |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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