SSS70N10A - Fairchild Semiconductor
Power Field-Effect Transistor, 28A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 23mΩ |
| Element Configuration | Single |
| Fall Time | 84ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 49W |
| Min Breakdown Voltage | 100V |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 49W |
| Rise Time | 24ns |
| RoHS | Non-Compliant |
| Turn-Off Delay Time | 112ns |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| STMicroelectronics | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| Fuji | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Renesas | Obsolete | ||
| Renesas | Obsolete | ||
| Renesas | Obsolete | ||
| Renesas | Obsolete | ||
| Renesas | Obsolete |
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